| PART |
Description |
Maker |
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
| NE6501077 |
10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
ETC
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CFK2062-P1 |
800 to 900 MHz 30 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| 3SK241 |
GaAs N-Channel MES FET
|
Panasonic Semiconductor
|
| 3SK147 |
GAAS N-CHANNEL DUAL-GATE MES FET
|
Sony Corporation
|
| 3SK149 |
GaAs N-Channel Dual-Gate MES FET
|
SONY
|
| NE3520S03-T1D-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
California Eastern Labs
|
